IXFT32

IXFT32N100XHV vs IXFT320N10T2 vs IXFT320N10T2-TRL

 
PartNumberIXFT32N100XHVIXFT320N10T2IXFT320N10T2-TRL
DescriptionMOSFET 1000V 32A TO-268HV Power MOSFETMOSFET Trench T2 HiperFET Power MOSFETMOSFET IXFT320N10T2 TRL
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268HV-3TO-268-3-
Number of Channels1 Channel--
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1000 V100 V-
Id Continuous Drain Current32 A320 A-
Rds On Drain Source Resistance220 mOhms3.5 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V4 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge130 nC430 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation890 W1 kW-
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFETTrenchT2
PackagingTubeTubeReel
SeriesX-ClassIXFT320N10-
Transistor Type1 N-Channel--
BrandIXYSIXYSIXYS
Forward Transconductance Min14 S80 S-
Fall Time12 ns73 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time12 ns46 ns-
Factory Pack Quantity3030400
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time80 ns73 ns-
Typical Turn On Delay Time29 ns36 ns-
Height-5.1 mm-
Length-16.05 mm-
Type-TrenchT2 HiperFET Power MOSFET-
Width-14 mm-
Unit Weight-0.229281 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFT32N100XHV MOSFET 1000V 32A TO-268HV Power MOSFET
IXFT320N10T2 MOSFET Trench T2 HiperFET Power MOSFET
IXFT320N10T2-TRL MOSFET IXFT320N10T2 TRL
IXFT32N100XHV MOSFET 1KV 32A ULTRA JCT TO268HV
IXFT320N10T2 Darlington Transistors MOSFET Trench T2 HiperFET Power MOSFET
IXFT32N50Q MOSFET 500V 32A
IXFT32N50 MOSFET 32 Amps 500V 0.15 Rds
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