IXFT80N1

IXFT80N10 vs IXFT80N10Q vs IXFT80N15Q

 
PartNumberIXFT80N10IXFT80N10QIXFT80N15Q
DescriptionMOSFET 80 Amps 100V 0.125 RdsMOSFET 80 Amps 100V 0.015 RdsMOSFET 80 Amps 150V 0.0225 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance12.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHyperFETHyperFETHyperFET
PackagingTubeTubeTube
Height5.1 mm--
Length16.05 mm--
SeriesIXFT80N10IXFT80N10IXFT80N15
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width14 mm--
BrandIXYS--
Fall Time26 ns30 ns20 ns
Product TypeMOSFET--
Rise Time63 ns70 ns55 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns68 ns68 ns
Typical Turn On Delay Time41 ns30 ns30 ns
Unit Weight0.158733 oz0.158733 oz4500 g
Package Case-TO-268-2TO-268-2
Pd Power Dissipation-360 W360 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-80 A80 A
Vds Drain Source Breakdown Voltage-100 V150 V
Rds On Drain Source Resistance-15 mOhms22.5 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFT80N10 MOSFET 80 Amps 100V 0.125 Rds
IXFT80N10 MOSFET 80 Amps 100V 0.125 Rds
IXFT80N10Q MOSFET 80 Amps 100V 0.015 Rds
IXFT80N15Q MOSFET 80 Amps 150V 0.0225 Rds
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