IXFT9

IXFT96N20P vs IXFT94N30P3 vs IXFT94N30T

 
PartNumberIXFT96N20PIXFT94N30P3IXFT94N30T
DescriptionMOSFET 96 Amps 200V 0.024 RdsMOSFET N-Channel: Power MOSFET w/Fast DiodeMOSFET Trench HiperFET Power MOSFET
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268-3TO-268-3TO-268-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V300 V300 V
Id Continuous Drain Current96 A94 A94 A
Rds On Drain Source Resistance24 mOhms36 mOhms36 mOhms
Vgs th Gate Source Threshold Voltage5 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge145 nC102 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation600 W1040 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height5.1 mm--
Length16.05 mm--
SeriesIXFT96N20IXFT94N30IXFT94N30
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT HiPerFET Power MOSFET--
Width14 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min40 S40 S-
Fall Time30 ns11 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time30 ns19 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns49 ns-
Typical Turn On Delay Time28 ns23 ns-
Unit Weight0.158733 oz0.229281 oz0.229281 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFT96N20P MOSFET 96 Amps 200V 0.024 Rds
IXFT94N30P3 MOSFET N-Channel: Power MOSFET w/Fast Diode
IXFT94N30T MOSFET Trench HiperFET Power MOSFET
IXFT9N80Q MOSFET 9 Amps 800V 1.1W Rds
IXFT96N20P Darlington Transistors MOSFET 96 Amps 200V 0.024 Rds
IXFT9N80Q MOSFET 9 Amps 800V 1.1W Rds
IXFT94N30T MOSFET Trench HiperFET Power MOSFET
IXFT94N30P3 IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode
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