 |  |  | |
| PartNumber | IXFX21N100F | IXFX210N30X3 | IXFX210N17T |
| Description | RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | MOSFET N-CH 170V 210A PLUS247 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | RF MOSFET Transistors | MOSFET | - |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 21 A | - | - |
| Vds Drain Source Breakdown Voltage | 1000 V | - | - |
| Rds On Drain Source Resistance | 500 mOhms | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Packaging | Tube | Tube | - |
| Configuration | 1 N-Channel | - | - |
| Height | 21.34 mm | - | - |
| Length | 16.13 mm | - | - |
| Width | 5.21 mm | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 15 S | - | - |
| Number of Channels | 1 Channel | - | - |
| Channel Mode | Enhancement | - | - |
| Fall Time | 15 ns | - | - |
| Pd Power Dissipation | 500 W | - | - |
| Product Type | RF MOSFET Transistors | MOSFET | - |
| Qg Gate Charge | 160 nC | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Unit Weight | 0.158733 oz | - | - |
| Tradename | - | HiPerFET | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFX21N100F | RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS | |
| IXFX210N30X3 | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | ||
| IXFX21N100Q | MOSFET 21 Amps 1000V 0.5 Rds | ||
| IXFX21N100F | MOSFET N-CH 1000V 21A PLUS247-3 | ||
| IXFX210N17T | MOSFET N-CH 170V 210A PLUS247 | ||
| IXFX210N30X3 | 300V/210A ULTRA JUNCTION X3-CLAS | ||
| IXFX21N100Q | MOSFET 21 Amps 1000V 0.5 Rds |