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| PartNumber | IXFX27N80Q | IXFX27N80 | IXFX27N80P |
| Description | MOSFET 27 Amps 800V 0.32 Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 27 A | - | - |
| Rds On Drain Source Resistance | 320 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 170 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HyperFET | - | - |
| Packaging | Tube | - | - |
| Height | 21.34 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | IXFX27N80 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HiPerFET Power MOSFETS Q-CLASS | - | - |
| Width | 5.21 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 28 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFX27N80Q | MOSFET 27 Amps 800V 0.32 Rds | |
| IXFX27N80 | Neu und Original | ||
| IXFX27N80P | Neu und Original | ||
| IXFX27N80Q | Darlington Transistors MOSFET 27 Amps 800V 0.32 Rds |