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| PartNumber | IXFX64N50P | IXFX64N50Q3 | IXFX64N50 |
| Description | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | PLUS247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 64 A | 64 A | - |
| Rds On Drain Source Resistance | 85 mOhms | 85 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | 30 V | - |
| Qg Gate Charge | 150 nC | 145 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 830 W | 1 kW | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | HiPerFET | PolarHV HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.34 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | IXFX64N50 | IXFX64N50 | HiPerFET, PolarHT |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 5.21 mm | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 22 ns | - | 22 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 250 ns | 25 ns |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 85 ns | - | 85 ns |
| Typical Turn On Delay Time | 30 ns | - | 30 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
| Package Case | - | - | TO-247-3 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | PLUS247-3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 830W |
| Drain to Source Voltage Vdss | - | - | 500V |
| Input Capacitance Ciss Vds | - | - | 8700pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 64A (Tc) |
| Rds On Max Id Vgs | - | - | 85 mOhm @ 32A, 10V |
| Vgs th Max Id | - | - | 5.5V @ 8mA |
| Gate Charge Qg Vgs | - | - | 150nC @ 10V |
| Pd Power Dissipation | - | - | 830 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 64 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 85 mOhms |
| Qg Gate Charge | - | - | 150 nC |
| Forward Transconductance Min | - | - | 30 S |