PartNumber | IXGH28N60B3D1 | IXGH28N120BD1 | IXGH28N60A3 |
Description | IGBT Transistors 28 Amps 600V | IGBT Transistors 28 Amps 1200V 3.50 Rds | IGBT Transistors DISC IGBT PT-LOW FREQUENCY |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Package / Case | TO-247AD-3 | TO-247AD-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 1200 V | - |
Collector Emitter Saturation Voltage | 1.5 V | - | - |
Continuous Collector Current at 25 C | 66 A | - | - |
Pd Power Dissipation | 190 W | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | IXGH28N60 | IXGH28N120 | - |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 150 A | 50 A | - |
Brand | IXYS | IXYS | IXYS |
Gate Emitter Leakage Current | +/- 100 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.229281 oz | 0.229281 oz | - |
Maximum Gate Emitter Voltage | - | 20 V | - |
Height | - | 21.46 mm | - |
Length | - | 16.26 mm | - |
Width | - | 5.3 mm | - |
Tradename | - | - | GenX3 |