| PartNumber | IXGK55N120A3H1 | IXGK64N60B3D1 | IXGK72N60A3H1 |
| Description | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | IGBT Transistors 75Amps 600V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.85 V | 600 V | 1.35 V |
| Continuous Collector Current at 25 C | 125 A | - | 75 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Series | IXGK55N120 | IXGK64N60 | IXGK72N60 |
| Brand | IXYS | IXYS | IXYS |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.352740 oz | 0.373904 oz | 0.373904 oz |
| RoHS | - | Y | Y |
| Pd Power Dissipation | - | 460 W | 540 W |
| Height | - | 26.59 mm | 26.59 mm |
| Length | - | 20.29 mm | 20.29 mm |
| Width | - | 5.31 mm | 5.31 mm |
| Tradename | - | GenX3 | GenX3 |
| Technology | - | - | Si |
| Continuous Collector Current Ic Max | - | - | 400 A |
| Operating Temperature Range | - | - | - 55 C to + 150 C |
| Continuous Collector Current | - | - | 75 A |