IXGT20

IXGT20N 60B vs IXGT20N 60BD1 vs IXGT20N100

 
PartNumberIXGT20N 60BIXGT20N 60BD1IXGT20N100
DescriptionIGBT Transistors 40 Amps 600 V 2.0 V RdsIGBT Transistors 40 Amps 600 V 2.0 V RdsIGBT 1000V 40A 150W TO268
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-268AA-3TO-268AA-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGT20N 60IXGT20N 60-
PackagingTubeTube-
Continuous Collector Current Ic Max40 A40 A-
Height5.1 mm5.1 mm-
Length16.05 mm16.05 mm-
Width14 mm14 mm-
BrandIXYSIXYS-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.158733 oz0.158733 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXGT20N 60B IGBT Transistors 40 Amps 600 V 2.0 V Rds
IXGT20N 60BD1 IGBT Transistors 40 Amps 600 V 2.0 V Rds
IXGT20N60BD1 IGBT 600V 40A 150W TO268
IXGT20N100 IGBT 1000V 40A 150W TO268
IXGT20N120 IGBT 1200V 40A 150W TO268
IXGT20N60B IGBT 600V 40A 150W TO268
IXGT20N120BD1 IGBT 1200V 40A 190W TO268
IXGT20N140C3H1 IGBT Modules 40khz C-IGBT w/Diode Power Device
IXGT20N 60BD1 IGBT Transistors 40 Amps 600 V 2.0 V Rds
IXGT20N 60B IGBT Transistors 40 Amps 600 V 2.0 V Rds
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