IXGT32N17

IXGT32N170 vs IXGT32N170 T vs IXGT32N170 TRL

 
PartNumberIXGT32N170IXGT32N170 TIXGT32N170 TRL
DescriptionIGBT Transistors 72 Amps 1700 V 3.3 V Rds
ManufacturerIXYS--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-268-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.7 kV--
Collector Emitter Saturation Voltage2.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation350 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGT32N170--
PackagingTube--
Continuous Collector Current Ic Max200 A--
Height5.1 mm--
Length16.05 mm--
Operating Temperature Range- 55 C to + 150 C--
Width14 mm--
BrandIXYS--
Continuous Collector Current75 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.158733 oz--
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXGT32N170A IGBT Transistors 72 Amps 1700 V 5.0 V Rds
IXGT32N170 IGBT Transistors 72 Amps 1700 V 3.3 V Rds
IXGT32N170-TRL IGBT Transistors IXGT32N170 TRL
IXGT32N170 T Neu und Original
IXGT32N170 TRL Neu und Original
IXGT32N170A IGBT Transistors 72 Amps 1700 V 5.0 V Rds
IXGT32N170 IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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