IXKP2

IXKP24N60C5 vs IXKP20N60C5M vs IXKP20N60C5

 
PartNumberIXKP24N60C5IXKP20N60C5MIXKP20N60C5
DescriptionMOSFET 24 Amps 600VMOSFET 20 Amps 600VMOSFET N-CH 600V 20A TO220AB
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current24 A7.6 A-
Rds On Drain Source Resistance165 mOhms200 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation250 W33 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameCOOLMOSCOOLMOSCOOLMOS
PackagingTubeTubeTube
Height9.15 mm--
Length10.66 mm--
SeriesIXKP24N60IXKP20N60IXKP20N60
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.82 mm--
BrandIXYSIXYS-
Product TypeMOSFETMOSFET-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.081130 oz0.081130 oz0.081130 oz
Vgs th Gate Source Threshold Voltage-3.5 V-
Type-CoolMOS Power MOSFET-
Fall Time-5 ns5 ns
Rise Time-5 ns5 ns
Typical Turn Off Delay Time-50 ns50 ns
Typical Turn On Delay Time-10 ns10 ns
Package Case--TO-220-3
Pd Power Dissipation--33 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--7.6 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--3.5 V
Rds On Drain Source Resistance--200 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXKP24N60C5 MOSFET 24 Amps 600V
IXKP24N60C5M MOSFET 24 Amps 600V
IXKP20N60C5M MOSFET 20 Amps 600V
IXKP20N60C5 MOSFET N-CH 600V 20A TO220AB
IXKP24N60C5N Neu und Original
IXKP24N60C5 IGBT Transistors MOSFET 24 Amps 600V
IXKP20N60C5M MOSFET 20 Amps 600V
IXKP24N60C5M MOSFET 24 Amps 600V
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