PartNumber | IXTA26P20P | IXTA260N055T2 | IXTA260N055T2-7 |
Description | MOSFET -26.0 Amps -200V 0.170 Rds | MOSFET DISCMSFT NCHTRENCHGATE-GEN2 | MOSFET 260 Amps 55V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-263AA-3 | - | TO-263-7 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | - | 55 V |
Id Continuous Drain Current | 26 A | - | 260 A |
Rds On Drain Source Resistance | 170 mOhms | - | 3.3 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | 4 V |
Vgs Gate Source Voltage | 10 V | - | 20 V |
Qg Gate Charge | 56 nC | - | 140 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 175 C |
Pd Power Dissipation | 300 W | - | 480 W |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 4.83 mm | - | 4.7 mm |
Length | 10.41 mm | - | 9.4 mm |
Series | IXTA26P20 | - | IXTA260N055 |
Transistor Type | 1 P-Channel | - | - |
Width | 9.65 mm | - | 10.2 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 10 S | - | 55 S |
Fall Time | 21 ns | - | 24 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 33 ns | - | 27 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 46 ns | - | 36 ns |
Typical Turn On Delay Time | 18 ns | - | 20 ns |
Unit Weight | 0.056438 oz | - | 0.056438 oz |
Tradename | - | TrenchT2 | HiPerFET |
Type | - | - | TrenchT2 Power MOSFET |