IXTH13

IXTH130N15X4 vs IXTH130N10T vs IXTH130N15T

 
PartNumberIXTH130N15X4IXTH130N10TIXTH130N15T
DescriptionMOSFET DISCMSFT NCH HIPERFET-Q CLASSMOSFET 130 Amps 100V 8.5 RdsMOSFET 130 Amps 150V 12 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage150 V100 V150 V
Id Continuous Drain Current130 A130 A130 A
Rds On Drain Source Resistance8.5 mOhms8.5 mOhms12 Ohms
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge87 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation400 W360 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFETHiPerFET
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Fall Time10 ns28 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns47 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns44 ns-
Typical Turn On Delay Time20 ns30 ns-
Packaging-TubeBulk
Height-21.46 mm-
Length-16.26 mm-
Series-IXTH130N10-
Width-5.3 mm-
Unit Weight-0.229281 oz0.229281 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTH130N15X4 MOSFET DISCMSFT NCH HIPERFET-Q CLASS
IXTH130N20T MOSFET 130Amps 200V
IXTH130N10T MOSFET 130 Amps 100V 8.5 Rds
IXTH130N15T MOSFET 130 Amps 150V 12 Rds
IXTH13N80 MOSFET 13 Amps 800V
IXTH130N15T MOSFET N-CH 150V 130A TO-247
IXTH13N110 MOSFET 13 Amps 1100V 0.92 Rds
IXTH13N80 MOSFET 13 Amps 800V
IXTH130N10T MOSFET N-CH 100V 130A TO-247
IXTH130N20T MOSFET 130Amps 200V
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