IXTH48

IXTH48N65X2 vs IXTH48N15 vs IXTH48N20

 
PartNumberIXTH48N65X2IXTH48N15IXTH48N20
DescriptionDiscrete Semiconductor Modules DiscMSFT NChUltraJnctn X2Class TO-247ADMOSFET 48 Amps 150V 0.032 RdsMOSFET 48 Amps 200V 0.050 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETMOSFET
RoHSYYY
ProductPower MOSFET Modules--
TypeX2-Class--
Vgs Gate Source Voltage30 V20 V20 V
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time15 ns17 ns17 ns
Id Continuous Drain Current48 A48 A48 A
Pd Power Dissipation660 W180 W275 W
Product TypeDiscrete Semiconductor ModulesMOSFETMOSFET
Rds On Drain Source Resistance65 mOhms32 mOhms50 mOhms
Rise Time26 ns20 ns19 ns
Factory Pack Quantity303030
SubcategoryDiscrete Semiconductor ModulesMOSFETsMOSFETs
TradenameHiPerFET--
Typical Turn Off Delay Time50 ns68 ns79 ns
Typical Turn On Delay Time19 ns18 ns19 ns
Vds Drain Source Breakdown Voltage650 V150 V200 V
Vgs th Gate Source Threshold Voltage3 V--
Technology-SiSi
Number of Channels-1 Channel1 Channel
Channel Mode-EnhancementEnhancement
Height-21.46 mm21.46 mm
Length-16.26 mm16.26 mm
Series-IXTH48N15IXTH48N20
Transistor Type-1 N-Channel1 N-Channel
Width-5.3 mm5.3 mm
Unit Weight-0.229281 oz0.229281 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTH48N65X2 Discrete Semiconductor Modules DiscMSFT NChUltraJnctn X2Class TO-247AD
IXTH48P20P MOSFET -48.0 Amps -200V 0.085 Rds
IXTH48N15 MOSFET 48 Amps 150V 0.032 Rds
IXTH48N20 MOSFET 48 Amps 200V 0.050 Rds
IXTH48N20T MOSFET N-CH 200V 48A TO-247
IXTH48N65X2 MOSFET N-CH 650V 48A TO-247
IXTH48P20P(TO-247) Neu und Original
IXTH48P20P Darlington Transistors MOSFET -48.0 Amps -200V 0.085 Rds
IXTH48N15 MOSFET 48 Amps 150V 0.032 Rds
IXTH48N20 MOSFET 48 Amps 200V 0.050 Rds
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