IXTH50

IXTH500N04T2 vs IXTH50N25T vs IXTH50N20

 
PartNumberIXTH500N04T2IXTH50N25TIXTH50N20
DescriptionMOSFET TRENCHT2 PWR MOSFET 40V 500AMOSFET Trench Gate Power MOSFETMOSFET 50 Amps 200V 0.045 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V250 V200 V
Id Continuous Drain Current500 A50 A50 A
Rds On Drain Source Resistance1.6 mOhms60 mOhms45 mOhms
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge405 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 150 C
Pd Power Dissipation1 kW-300 W
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFET-
PackagingTubeTubeTube
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
SeriesIXTH500N04IXTH50N25IXTH50N20
TypeTrenchT2 Power MOSFET--
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min75 S-32 S
Fall Time44 ns-16 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16 ns-15 ns
Factory Pack Quantity30130
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time68 ns-72 ns
Typical Turn On Delay Time37 ns-18 ns
Unit Weight0.056438 oz0.056438 oz0.229281 oz
Number of Channels-1 Channel1 Channel
Configuration-SingleSingle
Transistor Type-1 N-Channel1 N-Channel
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTH500N04T2 MOSFET TRENCHT2 PWR MOSFET 40V 500A
IXTH50P10 MOSFET -50 Amps -100V 0.055 Rds
IXTH50N25T MOSFET Trench Gate Power MOSFET
IXTH50N20 MOSFET 50 Amps 200V 0.045 Rds
IXTH50N10 Neu und Original
IXTH50N20A Neu und Original
IXTH500N04T2 MOSFET N-CH 40V 500A TO-247
IXTH50P10 Darlington Transistors MOSFET -50 Amps -100V 0.055 Rds
IXTH50P085 MOSFET P-CH 85V 50A TO-247AD
IXTH50N30 MOSFET 59 Amps 300V 0.065 Rds
IXTH50N20 MOSFET 50 Amps 200V 0.045 Rds
IXTH50N25T MOSFET Trench Gate Power MOSFET
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