IXTK60

IXTK60N50L2 vs IXTK600N04T2 vs IXTK60N25

 
PartNumberIXTK60N50L2IXTK600N04T2IXTK60N25
DescriptionMOSFET 60 Amps 500VMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V40 V-
Id Continuous Drain Current60 A600 A-
Rds On Drain Source Resistance100 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage4.5 V1.5 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge610 nC590 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation960 W1.25 kW-
Channel ModeEnhancementEnhancement-
TradenameLinearL2HiPerFET-
PackagingTubeTube-
Height26.59 mm--
Length20.29 mm--
SeriesIXTK60N50IXTK600N04-
TypeLinearL2 Power MOSFETTrenchT2 GigaMOS-
Width5.31 mm--
BrandIXYSIXYS-
Forward Transconductance Min18 S90 S-
Fall Time38 ns250 ns-
Product TypeMOSFETMOSFET-
Rise Time40 ns20 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time165 ns90 ns-
Typical Turn On Delay Time40 ns40 ns-
Unit Weight0.264555 oz0.352740 oz-
Number of Channels-1 Channel-
Configuration-Single-
Product-MOSFET Gate Drivers-
Transistor Type-1 N-Channel-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTK60N50L2 MOSFET 60 Amps 500V
IXTK600N04T2 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXTK600N04T2 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXTK60N25 Neu und Original
IXTK60N50L2 MOSFET N-CH 500V 60A TO-264
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