IXTN21

IXTN210P10T vs IXTN21N100 vs IXTN21N100L

 
PartNumberIXTN210P10TIXTN21N100IXTN21N100L
DescriptionDiscrete Semiconductor Modules TrenchP Channel Power MOSFETsMOSFET 21 Amps 100V 0.55 Ohm Rds21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesMOSFET-
RoHSYY-
TypeMOSFET--
Mounting StyleScrew MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXTN210P10IXTN21N100-
PackagingTubeTube-
BrandIXYSIXYS-
Product TypeDiscrete Semiconductor ModulesMOSFET-
Factory Pack Quantity1010-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
TradenameTrenchP--
Unit Weight1.058219 oz1.058219 oz-
Technology-Si-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-1 kV-
Id Continuous Drain Current-21 A-
Rds On Drain Source Resistance-550 mOhms-
Vgs Gate Source Voltage-20 V-
Pd Power Dissipation-520 W-
Configuration-Single-
Channel Mode-Enhancement-
Height-9.6 mm-
Length-38.23 mm-
Transistor Type-1 N-Channel-
Width-25.42 mm-
Forward Transconductance Min-24 S-
Fall Time-40 ns-
Rise Time-50 ns-
Typical Turn Off Delay Time-100 ns-
Typical Turn On Delay Time-30 ns-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTN210P10T Discrete Semiconductor Modules TrenchP Channel Power MOSFETs
IXTN21N100 MOSFET 21 Amps 100V 0.55 Ohm Rds
IXTN21N100L 21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
IXTN21N50 Neu und Original
IXTN210P10T Discrete Semiconductor Modules TrenchP Channel Power MOSFETs
IXTN21N100 MOSFET 21 Amps 100V 0.55 Ohm Rds
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