PartNumber | IXTP140N12T2 | IXTP140P05T | IXTP140N055T2 |
Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP | MOSFET -140 Amps -50V 0.008 Rds | MOSFET 140 Amps 0V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | Trench T2 | TrenchP Power MOSFET | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | P-Channel | N-Channel |
Fall Time | 17 ns | 25 ns | - |
Id Continuous Drain Current | 140 A | 140 A | 140 A |
Pd Power Dissipation | 577 W | 298 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 10 mOhms | 9 mOhms | 5.4 mOhms |
Rise Time | 30 ns | 34 ns | - |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | TrenchT2 | TrenchP | HiPerFET |
Typical Turn Off Delay Time | 39 ns | 38 ns | - |
Typical Turn On Delay Time | 27 ns | 28 ns | - |
Vds Drain Source Breakdown Voltage | 120 V | 50 V | 55 V |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2 V | - |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Qg Gate Charge | - | 200 nC | - |
Channel Mode | - | Enhancement | - |
Height | - | 16 mm | - |
Length | - | 10.66 mm | - |
Series | - | IXTP140P05 | IXTP140N055 |
Transistor Type | - | 1 P-Channel | 1 N-Channel |
Width | - | 4.83 mm | - |
Forward Transconductance Min | - | 44 S | - |
Unit Weight | - | 0.081130 oz | 0.012346 oz |