 | |  | |
| PartNumber | IXTP60N20T | IXTP60N10T | IXTP60N10TM |
| Description | MOSFET Trench POWER MOSFETs 200v, 60A | MOSFET MOSFET Id60 BVdass100 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220AB-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | - |
| Id Continuous Drain Current | 60 A | 60 A | - |
| Rds On Drain Source Resistance | 40 mOhms | 18 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 73 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 500 W | 176 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | IXTP60N20 | IXTP60N10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 40 S | 42 S | - |
| Fall Time | 13 ns | 37 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 40 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 43 ns | - |
| Typical Turn On Delay Time | 22 ns | 27 ns | - |
| Unit Weight | 0.012346 oz | 0.081130 oz | - |
| Height | - | 9.15 mm | - |
| Length | - | 10.66 mm | - |
| Width | - | 4.82 mm | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXTP60N20T | MOSFET Trench POWER MOSFETs 200v, 60A | |
| IXTP60N10T | MOSFET MOSFET Id60 BVdass100 | ||
| IXTP60N10TM | Neu und Original | ||
| IXTP60N10T | MOSFET N-CH 100V 60A TO-220 | ||
| IXTP60N20T | IGBT Transistors MOSFET Trench POWER MOSFETs 200v, 60A |