IXTQ10

IXTQ100N25P vs IXTQ102N25T vs IXTQ102N15T

 
PartNumberIXTQ100N25PIXTQ102N25TIXTQ102N15T
DescriptionMOSFET 100 Amps 250V 0.027 RdsMOSFET 102 Amps 250V 29 RdsMOSFET 102 Amps 150V 18 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-3P-3TO-3P-3TO-3P-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V250 V150 V
Id Continuous Drain Current100 A102 A102 A
Rds On Drain Source Resistance27 mOhms29 Ohms18 mOhms
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge185 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 175 C
Pd Power Dissipation600 W-455 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenamePolarHT-HiPerFET
PackagingTubeTubeBulk
Height20.3 mm--
Length15.8 mm-15.8 mm
SeriesIXTQ100N25IXTQ102N25-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT Power MOSFET--
Width4.9 mm-4.9 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min40 S--
Fall Time28 ns-22 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time26 ns-14 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns-25 ns
Typical Turn On Delay Time25 ns-20 ns
Unit Weight0.194007 oz0.194007 oz0.194007 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTQ100N25P MOSFET 100 Amps 250V 0.027 Rds
IXTQ10P50P MOSFET -10.0 Amps -500V 1.000 Rds
IXTQ102N25T MOSFET 102 Amps 250V 29 Rds
IXTQ102N15T MOSFET 102 Amps 150V 18 Rds
IXTQ100N25 Neu und Original
IXTQ100N25P(CUT PIN) Neu und Original
IXTQ102N15T MOSFET N-CH 150V 102A TO-3P
IXTQ102N20T MOSFET N-CH 200V 102A TO3P
IXTQ100N25P Darlington Transistors MOSFET 100 Amps 250V 0.027 Rds
IXTQ10P50P MOSFET -10.0 Amps -500V 1.000 Rds
IXTQ102N25T MOSFET 102 Amps 250V 29 Rds
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