IXTQ14

IXTQ140N10P vs IXTQ140N10T vs IXTQ140N20P

 
PartNumberIXTQ140N10PIXTQ140N10TIXTQ140N20P
DescriptionMOSFET 140 Amps 100V 0.011 Rds
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3P-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current140 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge155 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation600 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePolarHT--
PackagingTube--
Height20.3 mm--
Length15.8 mm--
SeriesIXTQ140N10--
Transistor Type1 N-Channel--
TypePolarHT Power MOSFET--
Width4.9 mm--
BrandIXYS--
Forward Transconductance Min45 S--
Fall Time26 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.194007 oz--
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTQ14N60P MOSFET 14.0 Amps 600 V 0.55 Ohm Rds
IXTQ140N10P MOSFET 140 Amps 100V 0.011 Rds
IXTQ140N10T Neu und Original
IXTQ140N20P Neu und Original
IXTQ140N10P MOSFET 140 Amps 100V 0.011 Rds
IXTQ14N60P IGBT Transistors MOSFET 14.0 Amps 600 V 0.55 Ohm Rds
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