IXTQ9

IXTQ96N20P vs IXTQ96N15P vs IXTQ96N25T

 
PartNumberIXTQ96N20PIXTQ96N15PIXTQ96N25T
DescriptionMOSFET 96 Amps 200V 0.024 RdsMOSFET 96 Amps 150V 0.024 RdsMOSFET 96 Amps 250V 36 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-3P-3TO-3P-3TO-3P-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V150 V250 V
Id Continuous Drain Current96 A96 A96 A
Rds On Drain Source Resistance24 mOhms24 mOhms29 mOhms
Vgs Gate Source Voltage20 V20 V30 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
Pd Power Dissipation600 W480 W625 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesIXTQ96N20IXTQ96N15IXTQ96N25
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Fall Time30 ns18 ns28 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time30 ns33 ns22 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns66 ns59 ns
Typical Turn On Delay Time28 ns30 ns20 ns
Unit Weight0.194007 oz0.194007 oz0.194007 oz
Vgs th Gate Source Threshold Voltage-5 V-
Qg Gate Charge-110 nC-
Tradename-PolarHTHiPerFET
Height-20.3 mm-
Length-15.8 mm15.8 mm
Type-PolarHT Power MOSFET-
Width-4.9 mm4.9 mm
Forward Transconductance Min-35 S-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTQ96N20P MOSFET 96 Amps 200V 0.024 Rds
IXTQ96N15P MOSFET 96 Amps 150V 0.024 Rds
IXTQ96N25T MOSFET 96 Amps 250V 36 Rds
IXTQ98N20T MOSFET 98 Amps 200V 26 Rds
IXTQ90N15T MOSFET N-CH 150V 90A TO-3P
IXTQ96N20P IGBT Transistors MOSFET 96 Amps 200V 0.024 Rds
IXTQ96N15P IGBT Transistors MOSFET 96 Amps 150V 0.024 Rds
IXTQ98N20T MOSFET 98 Amps 200V 26 Rds
IXTQ96N25T MOSFET 96 Amps 250V 36 Rds
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