IXTT11P

IXTT11P50-TRL vs IXTT11P50 vs IXTT11P50 T/R

 
PartNumberIXTT11P50-TRLIXTT11P50IXTT11P50 T/R
DescriptionDiscrete Semiconductor Modules Power MOSFETsMOSFET 11 Amps 500V 0.75 RdsIXTT11P50 T/R
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesMOSFET-
RoHSYY-
ProductPower MOSFET Modules--
Vgs Gate Source Voltage20 V20 V-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268-3TO-268-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelTube-
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityP-ChannelP-Channel-
Fall Time34 ns35 ns-
Id Continuous Drain Current- 11 A11 A-
Pd Power Dissipation300 W300 W-
Product TypeDiscrete Semiconductor ModulesMOSFET-
Rds On Drain Source Resistance750 mOhms750 mOhms-
Rise Time32 ns27 ns-
Factory Pack Quantity40030-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
Typical Turn Off Delay Time80 ns35 ns-
Typical Turn On Delay Time26 ns33 ns-
Vds Drain Source Breakdown Voltage- 500 V500 V-
Vgs th Gate Source Threshold Voltage- 5 V5 V-
Technology-Si-
Number of Channels-1 Channel-
Qg Gate Charge-130 nC-
Channel Mode-Enhancement-
Height-5.1 mm-
Length-14 mm-
Series-IXTT11P50-
Transistor Type-1 P-Channel-
Type-Standard Power MOSFET-
Width-16.05 mm-
Forward Transconductance Min-5 S-
Unit Weight-0.158733 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTT11P50-TRL Discrete Semiconductor Modules Power MOSFETs
IXTT11P50 MOSFET 11 Amps 500V 0.75 Rds
IXTT11P50 T/R IXTT11P50 T/R
IXTT11P50 Darlington Transistors MOSFET 11 Amps 500V 0.75 Rds
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