IXTT12N

IXTT12N150 vs IXTT12N150HV vs IXTT12N140

 
PartNumberIXTT12N150IXTT12N150HVIXTT12N140
DescriptionMOSFET 1500V High Voltage Power MOSFETMOSFET DISCMOSFET N-CH STD-HIVOLTAGEMOSFET High Voltage Power MOSFET
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268-3TO-268HV-2-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV1.5 kV-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance2 Ohms2.2 Ohms-
Vgs th Gate Source Threshold Voltage4.5 V2.5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge106 nC106 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation890 W890 W-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height5.1 mm--
Length14 mm--
SeriesIXTT12N150--
TypeHigh Voltage Power MOSFET--
Width16.05 mm--
BrandIXYSIXYS-
Forward Transconductance Min8 S--
Fall Time14 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns16 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time53 ns53 ns-
Typical Turn On Delay Time26 ns26 ns-
Unit Weight0.229281 oz--
Number of Channels-2 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTT12N150 MOSFET 1500V High Voltage Power MOSFET
IXTT12N150HV MOSFET DISCMOSFET N-CH STD-HIVOLTAGE
IXTT12N150HV MOSFET N-CH 1.5KV 12A TO268
IXTT12N150 Darlington Transistors MOSFET 1200V High Voltage Power MOSFET
IXTT12N140 MOSFET High Voltage Power MOSFET
Top