 |  |  | |
| PartNumber | IXYH20N65C3D1 | IXYH20N65C3 | IXYH20N65B3 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors DISC IGBT XPT-GENX3 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
| RoHS | Y | - | - |
| Product | Power Semiconductor Modules | - | - |
| Type | GenX3 | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247AD-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Tube | - | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 28 ns | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Pd Power Dissipation | 230 W | 230 W | - |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
| Rise Time | 34 ns | - | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | Discrete Semiconductor Modules | IGBTs | - |
| Typical Turn Off Delay Time | 80 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Technology | - | Si | - |
| Collector Emitter Voltage VCEO Max | - | 650 V | - |
| Collector Emitter Saturation Voltage | - | 2.27 V | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Continuous Collector Current at 25 C | - | 50 A | - |
| Continuous Collector Current Ic Max | - | 105 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXYH20N65C3D1 | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | |
| IXYH20N65C3 | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYH20N65B3 | Neu und Original | ||
| IXYH20N65C3 | IGBT 650V 50A 230W TO247AD |