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IXYH30N120C

IXYH30N120C4 vs IXYH30N120C3 vs IXYH30N120C3D1

 
PartNumberIXYH30N120C4IXYH30N120C3IXYH30N120C3D1
DescriptionDiscrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247ADIGBT Transistors 1200V XPT GenX3 IGBTIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesIGBT TransistorsIGBT Transistors
RoHSY-Y
ProductPower Semiconductor Modules--
TypeGenX4--
Vgs Gate Source Voltage20 V--
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247AD-3TO-247AD-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-Channel--
Fall Time53 ns--
Id Continuous Drain Current94 A--
Pd Power Dissipation500 W500 W416 W
Product TypeDiscrete Semiconductor ModulesIGBT TransistorsIGBT Transistors
Rise Time58 ns--
Factory Pack Quantity303030
SubcategoryDiscrete Semiconductor ModulesIGBTsIGBTs
TradenameXPTXPTXPT
Typical Turn Off Delay Time205 ns--
Typical Turn On Delay Time18 ns--
Vds Drain Source Breakdown Voltage1200 V--
Vgs th Gate Source Threshold Voltage4 V--
Technology-SiSi
Collector Emitter Voltage VCEO Max-1200 V1200 V
Collector Emitter Saturation Voltage-3.7 V3.7 V
Maximum Gate Emitter Voltage-30 V30 V
Continuous Collector Current at 25 C-75 A66 A
Series-IXYH30N120IXYH30N120
Continuous Collector Current Ic Max-75 A66 A
Gate Emitter Leakage Current-100 nA100 nA
Unit Weight-1.340411 oz1.340411 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse 		IXYH30N120C4 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXYH30N120C3 IGBT Transistors 1200V XPT GenX3 IGBT
IXYH30N120C3D1 IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
IXYH30N120C3 IGBT Transistors 1200V XPT GenX3 IGBT
IXYH30N120C3D1 IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
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