![]() | |||
| PartNumber | IXYN300N65A3 | IXYN30N170CV1 | IXYN35N100 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 SOT-227B(mini | IGBT Modules 1700V/85A High Voltage XPT IGBT | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | Power Semiconductor Modules | IGBT Silicon Modules | - |
| Type | GenX3 | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Screw Mount | Chassis Mount | - |
| Package / Case | SOT-227B-4 | Module | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Tube | Tube | - |
| Configuration | Single | Single Dual Emitter | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 160 ns | - | - |
| Id Continuous Drain Current | 470 A | - | - |
| Pd Power Dissipation | 1500 W | 680 W | - |
| Product Type | Discrete Semiconductor Modules | IGBT Modules | - |
| Rise Time | 125 ns | - | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | Discrete Semiconductor Modules | IGBTs | - |
| Tradename | XPT | XPT | - |
| Typical Turn Off Delay Time | 190 ns | - | - |
| Typical Turn On Delay Time | 42 ns | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Collector Emitter Voltage VCEO Max | - | 1700 V | - |
| Collector Emitter Saturation Voltage | - | 3 V | - |
| Continuous Collector Current at 25 C | - | 88 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Series | - | High Voltage | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |