 |  |  | |
| PartNumber | IXYP20N65C3 | IXYP20N65C3D1 | IXYP20N65B3D1 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Product | Power Semiconductor Modules | - | - |
| Type | GenX3 | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220AB-3 | - | TO-220-3 |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | IXYS |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | XPT, GenX3 | - |
| Technology | - | Si | Si |
| Series | - | Planar | - |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 650 V |
| Collector Emitter Saturation Voltage | - | - | 1.77 V |
| Maximum Gate Emitter Voltage | - | - | 20 V |
| Continuous Collector Current at 25 C | - | - | 58 A |
| Pd Power Dissipation | - | - | 230 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 175 C |
| Continuous Collector Current Ic Max | - | - | 108 A |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXYP20N65C3 | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | |
| IXYP20N65C3D1 | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYP20N65C3D1M | IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220 | ||
| IXYP20N65B3D1 | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYP20N65B3D1 | Neu und Original | ||
| IXYP20N65C3D1 | IGBT 650V 18A 50W TO220 | ||
| IXYP20N65C3D1M | IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220 |