 |  |  | |
| PartNumber | IXYR100N65A3V1 | IXYR100N120C3 | IXYR50N120C3D1 |
| Description | Discrete Semiconductor Modules Disc IGBT PT-Low Frequency ISOPLUS247 | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs | IGBT Transistors DISC IGBT XPT-GENX3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | Power Semiconductor Modules | - | - |
| Type | Low Frequency | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | ISOPLUS-247-3 | TO-247-3 | - |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | XPT | XPT, GenX3 |
| Technology | - | Si | Si |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 2.9 V | - |
| Maximum Gate Emitter Voltage | - | 30 V | - |
| Continuous Collector Current at 25 C | - | 104 A | - |
| Pd Power Dissipation | - | 484 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Series | - | IXYR100N120 | - |
| Continuous Collector Current Ic Max | - | 104 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Unit Weight | - | 1.340411 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXYR100N65A3V1 | Discrete Semiconductor Modules Disc IGBT PT-Low Frequency ISOPLUS247 | |
| IXYR100N120C3 | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs | ||
| IXYR50N120C3D1 | IGBT Transistors DISC IGBT XPT-GENX3 | ||
| IXYR50N120C3D1 | IGBT 1200V 56A 290W ISOPLUS247 | ||
| IXYR100N65A3V1 | IGBT | ||
| IXYR100N120C3 | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs |