![]() | |||
| PartNumber | JAN2N3019S | Jan2N3019 | Jan2N3019/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Bulk | Tray | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | Si |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-5-3 | TO-39-3 |
| Transistor Polarity | - | NPN | NPN |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 80 V | 80 V |
| Collector Base Voltage VCBO | - | 140 V | 140 V |
| Emitter Base Voltage VEBO | - | 7 V | 7 V |
| Collector Emitter Saturation Voltage | - | 200 mV | 0.5 V |
| Maximum DC Collector Current | - | 1 A | 1 A |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Maximum Operating Temperature | - | + 200 C | + 200 C |
| Pd Power Dissipation | - | 800 mW | 800 mW |
| DC Current Gain hFE Max | - | - | 300 at 500 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 15 at 1 A, 10 V |