PartNumber | JANS2N2905AL/TR | JANS2N2904A/TR | JANS2N2905A/TR |
Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-5-3 | TO-205AD-3 | TO-205AD-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 60 V | 60 V | 60 V |
Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.4 V | 0.4 V | 0.4 V |
Maximum DC Collector Current | 600 mA | 600 mA | 600 mA |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
DC Current Gain hFE Max | 450 at 1 mA, 10 V | 175 at 1 mA, 10 V | 450 at 1 mA, 10 V |
Packaging | Reel | - | Reel |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 50 at 500 mA, 10 V | 40 at 100 uA, 10 V | 50 at 500 mA, 10 V |
Pd Power Dissipation | 3 W | 3 W | 3 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 100 | 1 | 100 |
Subcategory | Transistors | Transistors | Transistors |