JANTX2N41

JANTX2N4150 vs JANTX2N4150S

 
PartNumberJANTX2N4150JANTX2N4150S
DescriptionBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJT
ManufacturerMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNN
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-5-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max70 V-
Collector Base Voltage VCBO100 V-
Emitter Base Voltage VEBO10 V-
Collector Emitter Saturation Voltage600 mV-
Maximum DC Collector Current10 A-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 200 C-
DC Current Gain hFE Max200 at 1 A, 5 VDC-
PackagingBulkBulk
BrandMicrochip / MicrosemiMicrochip / Microsemi
DC Collector/Base Gain hfe Min50 at 1 A, 5 VDC-
Pd Power Dissipation1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity11
SubcategoryTransistorsTransistors
Hersteller Teil # Beschreibung RFQ
Microchip / Microsemi
Microchip / Microsemi
JANTX2N4150 Bipolar Transistors - BJT Power BJT
JANTX2N4150S Bipolar Transistors - BJT Power BJT
JANTX2N4150 Trans GP BJT NPN 70V 10A 3-Pin TO-5
JANTX2N4150S Trans GP BJT NPN 70V 10A 3-Pin TO-39
JANTX2N4150 JANTXV2N4150 INSTOCK
Top