 |  | | |
| PartNumber | JANTXV2N3439L | JANTXV2N3439 | JANTXV2N3439UA |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | - |
| Packaging | Bulk | Bulk | Waffle |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-39-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 350 V | - |
| Collector Base Voltage VCBO | - | 450 V | - |
| Emitter Base Voltage VEBO | - | 7 V | - |
| Collector Emitter Saturation Voltage | - | 500 mV | - |
| Maximum DC Collector Current | - | 1 A | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 160 at 20 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 40 at 20 mA, 10 V | - |
| Pd Power Dissipation | - | 800 mW | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANTXV2N3439L | Bipolar Transistors - BJT Power BJT | |
| JANTXV2N3439 | Bipolar Transistors - BJT Power BJT | ||
| JANTXV2N3439UA | Bipolar Transistors - BJT Power BJT | ||
| JANTXV2N3439 | Trans GP BJT NPN 350V 1A 3-Pin TO-39 | ||
| JANTXV2N3439L | Bipolar Transistors - BJT Power BJT |