![]() | |||
| PartNumber | Jan2N2219A | Jan2N2219AL | Jan2N2219A/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-39-3 | - | TO-39-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
| Collector Base Voltage VCBO | 75 V | - | 75 V |
| Emitter Base Voltage VEBO | 6 V | - | 6 V |
| Collector Emitter Saturation Voltage | 300 mV | - | 0.3 V |
| Maximum DC Collector Current | 800 mA | - | 800 mA |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| DC Current Gain hFE Max | 150 at 1 mA, 10 VDC | - | 325 at 1 mA, 10 V |
| Packaging | Bulk | Tray | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 35 at 1 mA, 10 VDC | - | 50 at 100 uA, 10 V |
| Pd Power Dissipation | 800 mW | - | 3 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |