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| PartNumber | Jan2N2907AUB/TR |
| Description | Bipolar Transistors - BJT |
| Manufacturer | Microchip |
| Product Category | Bipolar Transistors - BJT |
| RoHS | N |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | LCC-3 |
| Transistor Polarity | PNP |
| Configuration | Single |
| Collector Emitter Voltage VCEO Max | 60 V |
| Collector Base Voltage VCBO | 60 V |
| Emitter Base Voltage VEBO | 5 V |
| Collector Emitter Saturation Voltage | 0.4 V |
| Maximum DC Collector Current | 600 mA |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 200 C |
| DC Current Gain hFE Max | 450 at 1 mA, 10 V |
| Brand | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 50 at 500 mA, 10 V |
| Pd Power Dissipation | 0.5 W |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 |
| Subcategory | Transistors |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jan2N2907AUB/TR | Bipolar Transistors - BJT | |
| Jan2N2907AUB/TR | Bipolar Transistors - BJT |