 | | | |
| PartNumber | Jantx2N5416 | Jantx2N5416S | JANTX2N5416U4 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-205AD-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 300 V | - | - |
| Collector Base Voltage VCBO | 300 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 120 | - | - |
| Packaging | Bulk | Bulk | Tray |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 750 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.014110 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jantx2N5416 | Bipolar Transistors - BJT Power BJT | |
| Jantx2N5416S | Bipolar Transistors - BJT Power BJT | ||
| JANTX2N5416U4 | Bipolar Transistors - BJT Power BJT | ||
| JANTX2N5416 | Trans GP BJT PNP 300V 1A 3-Pin TO-5 | ||
| JANTX2N5416S | Trans GP BJT PNP 300V 1A 3-Pin TO-39 | ||
| JANTX2N5416U4 | TRANS PNP 300V 1A | ||
| JANTX2N5416UA | - Bulk (Alt: JANTX2N5416UA) |