 |  | | |
| PartNumber | Jantx2N6987 | Jantx2N6987/TR | JANTX2N6901 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | MOSFET N-CH 100V 1.69A |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Packaging | Tube | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-116-14 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Quad | - |
| Collector Emitter Voltage VCEO Max | - | 60 V | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Collector Emitter Saturation Voltage | - | 1.6 V | - |
| Maximum DC Collector Current | - | 600 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 450 at 1 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 50 at 500 mA, 10 V | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jantx2N6989 | Bipolar Transistors - BJT Small-Signal BJT | |
| Jantx2N6987 | Bipolar Transistors - BJT Small-Signal BJT | ||
| Jantx2N6989/TR | Bipolar Transistors - BJT | ||
| Jantx2N6987/TR | Bipolar Transistors - BJT | ||
| JANTX2N6901 | MOSFET N-CH 100V 1.69A | ||
| JANTX2N6989 | Trans GP BJT NPN 50V 0.8A 14-Pin TO-116 | ||
| JANTX2N6987 | Trans GP BJT PNP 60V 0.6A 14-Pin SBCDIP | ||
| Jantx2N6989U | Darlington Transistors Small-Signal BJT |