Jantxv2N54 stock, Jantxv2N54, Jantxv2N5416


PartNumber	Jantxv2N5416	Jantxv2N5415	Jantxv2N5415S
Description	Bipolar Transistors - BJT Power BJT	Bipolar Transistors - BJT Power BJT	Bipolar Transistors - BJT Power BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	-	-
Mounting Style	Through Hole	-	-
Package / Case	TO-5-3	-	-
Transistor Polarity	PNP	-	-
Configuration	Single	-	-
Collector Emitter Voltage VCEO Max	300 V	-	-
Collector Base Voltage VCBO	350 V	-	-
Emitter Base Voltage VEBO	6 V	-	-
Collector Emitter Saturation Voltage	2 V	-	-
Maximum DC Collector Current	1 A	-	-
Minimum Operating Temperature	- 65 C	-	-
Maximum Operating Temperature	+ 200 C	-	-
DC Current Gain hFE Max	120 at 50 mA, 10 V	-	-
Packaging	Bulk	Bulk	Bulk
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
DC Collector/Base Gain hfe Min	30 at 50 mA, 10 V	-	-
Pd Power Dissipation	750 mW	-	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors

Search Part Number : "Jantxv2N54", Match & Start with "Jantxv2N54" - Total : 11

Hersteller	Teil #	Beschreibung
Microchip / Microsemi	Jantxv2N5416	Bipolar Transistors - BJT Power BJT
	Jantxv2N5415	Bipolar Transistors - BJT Power BJT
	Jantxv2N5415S	Bipolar Transistors - BJT Power BJT
	JANTXV2N5416U4	MOSFET Power BJT
	JANTXV2N5415	Trans GP BJT PNP 200V 1A 3-Pin TO-5
	JANTXV2N5416S	Trans GP BJT PNP 300V 1A 3-Pin TO-39
	Jantxv2N5415S	Bipolar Transistors - BJT Power BJT
	JANTXV2N5416U4	MOSFET Power BJT
	Jantxv2N5416UA	Bipolar Transistors - BJT Power BJT
	Jantxv2N5416	Bipolar Transistors - BJT Power BJT
	Jantxv2N5415UA	Bipolar Transistors - BJT Power BJT

Jantxv2N54