 |  | | |
| PartNumber | Jantxv2N6987/TR | Jantxv2N6987 | Jantxv2N6988 |
| Description | Bipolar Transistors - BJT | MOSFET BJTs | MOSFET BJTs |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
| RoHS | N | N | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-116-14 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Quad | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | - | - |
| Maximum DC Collector Current | 600 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 450 at 1 mA, 10 V | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 50 at 500 mA, 10 V | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Packaging | - | Tube | Tray |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jantxv2N6989/TR | Bipolar Transistors - BJT | |
| Jantxv2N6987/TR | Bipolar Transistors - BJT | ||
| Jantxv2N6988/TR | Bipolar Transistors - BJT | ||
| Jantxv2N6989 | MOSFET BJTs | ||
| Jantxv2N6987 | MOSFET BJTs | ||
| Jantxv2N6988 | MOSFET BJTs | ||
| JANTXV2N6989 | Trans GP BJT NPN 50V 0.8A 14-Pin TO-116 | ||
| Jantxv2N6989U | MOSFET Small-Signal BJT | ||
| Jantxv2N6989U/TR | Bipolar Transistors - BJT |