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KSA1156Y

KSA1156YS vs KSA1156YSTSTU vs KSA1156Y

 
PartNumberKSA1156YSKSA1156YSTSTUKSA1156Y
DescriptionBipolar Transistors - BJT PNP SiliconBipolar Transistors - BJT PNP Silicon Short Leads
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-126-3TO-126-3-
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 400 V- 400 V-
Collector Base Voltage VCBO- 400 V- 400 V-
Emitter Base Voltage VEBO- 7 V- 7 V-
Collector Emitter Saturation Voltage- 1 V- 1 V- 1 V
Maximum DC Collector Current0.5 A0.5 A0.5 A
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesKSA1156--
DC Current Gain hFE Max200200200
Height1.5 mm1.5 mm-
Length8 mm8 mm-
PackagingBulkTubeBulk
Width3.25 mm3.25 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 0.5 A- 0.5 A- 0.5 A
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation1000 mW1000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity200060-
SubcategoryTransistorsTransistors-
Part # AliasesKSA1156YS_NLKSA1156YSTSTU_NL-
Unit Weight0.026843 oz0.026738 oz0.026843 oz
Part Aliases--KSA1156YS_NL
Package Case--TO-126
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--- 400 V
Collector Base Voltage VCBO--- 400 V
Emitter Base Voltage VEBO--- 7 V
DC Collector Base Gain hfe Min--30
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		KSA1156YS Bipolar Transistors - BJT PNP Silicon
KSA1156YSTSTU Bipolar Transistors - BJT PNP Silicon Short Leads
KSA1156Y Neu und Original
KSA1156YSTU Neu und Original
ON Semiconductor
ON Semiconductor 		KSA1156YSTSTU TRANS PNP 400V 0.5A TO-126
KSA1156YS TRANS PNP 400V 0.5A TO-126
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