KSC2690AY

KSC2690AYS vs KSC2690AYSTU vs KSC2690AYSTSTU

 
PartNumberKSC2690AYSKSC2690AYSTUKSC2690AYSTSTU
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Si Transistor EpitaxialTRANS NPN 160V 1.2A TO-126
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3TO-126-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max160 V160 V-
Collector Base Voltage VCBO160 V160 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current1.2 A1.2 A-
Gain Bandwidth Product fT155 MHz155 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSC2690AKSC2690A-
DC Current Gain hFE Max320320-
Height11 mm11 mm-
Length8 mm8 mm-
PackagingBulkTube-
Width3.25 mm3.25 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current1.2 A1.2 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation1200 mW1.2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20001920-
SubcategoryTransistorsTransistors-
Part # AliasesKSC2690AYS_NL--
Unit Weight0.026843 oz0.026843 oz-
Collector Emitter Saturation Voltage-0.4 V-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSC2690AYS Bipolar Transistors - BJT NPN Epitaxial Sil
KSC2690AYSTU Bipolar Transistors - BJT NPN Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
KSC2690AYSTSTU TRANS NPN 160V 1.2A TO-126
KSC2690AYSTU TRANS NPN 160V 1.2A TO-126
KSC2690AYS TRANS NPN 160V 1.2A TO-126
KSC2690AYSTU(ROHS) Neu und Original
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