KSD2012Y stock, KSD2012Y, KSD2012YYDTU


PartNumber	KSD2012YYDTU	KSD2012YTU
Description	Bipolar Transistors - BJT NPN Si Transistor Epitaxial	Bipolar Transistors - BJT NPN Epitaxial Sil
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	E	E
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220F-3	TO-220F-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	60 V	60 V
Collector Base Voltage VCBO	60 V	60 V
Emitter Base Voltage VEBO	7 V	7 V
Collector Emitter Saturation Voltage	0.4 V	0.4 V
Maximum DC Collector Current	3 A	3 A
Gain Bandwidth Product fT	3 MHz	3 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
DC Current Gain hFE Max	320	320
Height	9.19 mm	9.19 mm
Length	10.16 mm	10.16 mm
Packaging	Tube	Tube
Width	4.7 mm	4.7 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	3 A	3 A
Pd Power Dissipation	25 W	25 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	50	50
Subcategory	Transistors	Transistors
Unit Weight	0.080072 oz	0.080072 oz

Search Part Number : "KSD2012Y", Match & Start with "KSD2012Y" - Total : 5

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	KSD2012YYDTU	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
ON Semiconductor / Fairchild	KSD2012YTU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSD2012YYDTU	TRANS NPN 60V 3A TO-220F
ON Semiconductor	KSD2012YTU	TRANS NPN 60V 3A TO-220F
	KSD2012Y	Neu und Original

KSD2012Y