PartNumber | KSD261CYTA | KSD261CGTA | KSD261CGBU |
Description | Bipolar Transistors - BJT NPN Epitaxial Transistor | Bipolar Transistors - BJT NPN Epitaxial Transistor | Bipolar Transistors - BJT NPN Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | T | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead | TO-92-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 20 V | 20 V | 20 V |
Collector Base Voltage VCBO | 40 V | 40 V | 40 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.18 V | 0.18 V | 0.18 V |
Maximum DC Collector Current | 0.5 A | 0.5 A | 0.5 A |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 400 | 400 | 400 |
Height | 4.58 mm | 4.7 mm | 4.58 mm |
Length | 4.58 mm | 4.7 mm | 4.58 mm |
Packaging | Ammo Pack | Ammo Pack | Bulk |
Width | 3.86 mm | 3.93 mm | 3.86 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
Pd Power Dissipation | 500 mW | 500 mW | 500 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 2000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.008466 oz | 0.008466 oz | 0.008466 oz |
Series | - | KSD261 | - |
Part # Aliases | - | KSD261CGTA_NL | - |