| PartNumber | KSD526Y | KSD526O | KSD526OTU |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil | TRANS NPN 80V 4A TO-220 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V | - |
| Collector Base Voltage VCBO | 80 V | 80 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.45 V | 0.45 V | - |
| Maximum DC Collector Current | 4 A | 4 A | - |
| Gain Bandwidth Product fT | 8 MHz | 8 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | KSD526 | - | - |
| DC Current Gain hFE Max | 240 | 240 | - |
| Height | 9.4 mm | 9.4 mm (Max) | - |
| Length | 10.1 mm | 10.1 mm (Max) | - |
| Packaging | Bulk | Bulk | - |
| Width | 4.7 mm | 4.7 mm (Max) | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 4 A | 4 A | - |
| DC Collector/Base Gain hfe Min | 40 | 40 | - |
| Pd Power Dissipation | 30 W | 30 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1200 | 200 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.063493 oz | 0.080072 oz | - |