PartNumber | KSE45H11 | KSE45H11TU |
Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | - 80 V | - 80 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V |
Collector Emitter Saturation Voltage | - 1 V | - 1 V |
Maximum DC Collector Current | 10 A | 10 A |
Gain Bandwidth Product fT | 40 MHz | 40 MHz |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | KSE45H | KSE45H |
Height | 9.4 mm | 9.4 mm |
Length | 10.1 mm | 10.1 mm |
Packaging | Bulk | Tube |
Width | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | - 10 A | - 10 A |
DC Collector/Base Gain hfe Min | 60 | 60 |
Pd Power Dissipation | 50 W | 50 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1200 | 1000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.063493 oz | 0.063493 oz |