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| PartNumber | L6491DTR | L6491D |
| Description | Gate Drivers High voltage high and low-side 4 A gate driver | Gate Drivers High voltage high and low-side 4 A gate driver |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Gate Drivers | Gate Drivers |
| Product | IGBT, MOSFET Gate Drivers | - |
| Type | High Side, Low Side | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-14 | SO-14 |
| Number of Drivers | 2 Driver | - |
| Number of Outputs | 1 Output | - |
| Output Current | 4 A | - |
| Rise Time | 15 ns | - |
| Fall Time | 15 ns | - |
| Supply Voltage Min | 10 V | - |
| Supply Voltage Max | 20 V | - |
| Operating Supply Current | - | - |
| Pd Power Dissipation | 1 W | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 125 C | - |
| Series | L6491 | L6491 |
| Packaging | Reel | Tube |
| Features | Integrated bootstrap diode, Adjustable deadtime, Interlocking function, Comparator for fault protections | - |
| Output Voltage | 580 V | - |
| Technology | Si | Si |
| Brand | STMicroelectronics | STMicroelectronics |
| Off Time Max | 120 ns | - |
| Shutdown | Shutdown | - |
| Development Kit | - | - |
| Maximum Turn Off Delay Time | 120 ns | - |
| Maximum Turn On Delay Time | 120 ns | - |
| Moisture Sensitive | Yes | Yes |
| Product Type | Gate Drivers | Gate Drivers |
| Rds On Drain Source Resistance | 175 Ohms | - |
| Factory Pack Quantity | 2500 | 1000 |
| Subcategory | PMIC - Power Management ICs | PMIC - Power Management ICs |
| RoHS | - | Y |
| Unit Weight | - | 0.009143 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
L6491DTR | Gate Drivers High voltage high and low-side 4 A gate driver | |
| L6491D | Gate Drivers High voltage high and low-side 4 A gate driver | ||
| L6491D | Gate Drivers High voltage high and low-side 4 A gate drive | ||
| L6491DTR | Gate Drivers Industrial & ASIC | ||
| L6491 | Neu und Original |