MBT35200MT

MBT35200MT1G vs MBT35200MT1 vs MBT35200MT2G

 
PartNumberMBT35200MT1GMBT35200MT1MBT35200MT2G
DescriptionBipolar Transistors - BJT Low SaturationBipolar Transistors - BJT Low SaturationBipolar Transistors - BJT TSOP6 PNP XSTR SPCL
ManufacturerON Semiconductor-ON
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTSOP-6--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 35 V--
Collector Base Voltage VCBO- 55 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.26 V--
Maximum DC Collector Current2 A-2 A
Gain Bandwidth Product fT100 MHz-100 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMBT35200-MBT35200MT2G
Height0.94 mm--
Length3 mm--
PackagingReel-Reel
Width1.5 mm--
BrandON Semiconductor--
Continuous Collector Current- 2 A--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesMBT35200MT2G--
Unit Weight0.000705 oz-0.000705 oz
Part Aliases--MBT35200MT1G
Package Case--TSOP
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--35 V
Collector Base Voltage VCBO--55 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--100 at 1 A at 1.5 V 100 at 1.5 A at 1.5 V 100 at 2 A at 3 V
DC Current Gain hFE Max--100 at 1 A at 1.5 V
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MBT35200MT1G Bipolar Transistors - BJT Low Saturation
MBT35200MT1G Bipolar Transistors - BJT Low Saturation
MBT35200MT2G Bipolar Transistors - BJT TSOP6 PNP XSTR SPCL
MBT35200MT1 Bipolar Transistors - BJT Low Saturation
MBT35200MT1(G4) Neu und Original
MBT35200MTE Neu und Original
MBT35200MTI Neu und Original
MBT35200MT1G-CUT TAPE Neu und Original
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