 |  | | |
| PartNumber | MBT3906DW1T1G | MBT3906DW1T1(A2) | MBT3906DW1T1G-CUT TAPE |
| Description | Bipolar Transistors - BJT SS GP XSTR PNP 40V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 40 V | - | - |
| Collector Base Voltage VCBO | - 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.4 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MBT3906DW1 | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 200 mAdc | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | MBT3906DW1T2G | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| MBT3906DW1T1G | Bipolar Transistors - BJT SS GP XSTR PNP 40V | ||
| MBT3906DW1T1(A2) | Neu und Original | ||
| MBT3906DW1T1GON | Neu und Original | ||
| MBT3906DW1T1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
MBT3906DW1T1 | Bipolar Transistors - BJT 200mA 40V Dual PNP | |
| MBT3906DW1T1 | Neu und Original | ||
| MBT3906DW1T1G | Bipolar Transistors - BJT SS GP XSTR PNP 40V |