| PartNumber | MCH3477-TL-E | MCH3477-TL-W | MCH3477-TL-H |
| Description | MOSFET HIGH FREQUENCY AMPLIFIER | MOSFET NCH 1.8V DRIVE SERIE | IGBT Transistors MOSFET NCH 1.8V DRIVE SERIES |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 | - |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000176 oz | 0.000176 oz | 0.004395 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 4.5 A | - |
| Rds On Drain Source Resistance | - | 29 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 5.1 nC | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 2 S | - |
| Fall Time | - | 32 ns | - |
| Rise Time | - | 26 ns | - |
| Typical Turn Off Delay Time | - | 38 ns | - |
| Typical Turn On Delay Time | - | 7.5 ns | - |
| Series | - | - | MCH3477 |
| Package Case | - | - | SOT-323-3 |
| Pd Power Dissipation | - | - | 1 W |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 38 mOhms |