MJ80

MJ802G vs MJ802512 vs MJ802A-Y190-400

 
PartNumberMJ802GMJ802512MJ802A-Y190-400
DescriptionBipolar Transistors - BJT 30A 90V 200W NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-204-2--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max90 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.8 V--
Maximum DC Collector Current30 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ802--
Height8.51 mm--
Length39.37 mm--
PackagingTray--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current30 A--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.423288 oz--
Hersteller Teil # Beschreibung RFQ
MJ802G Bipolar Transistors - BJT 30A 90V 200W NPN
MJ802512 Neu und Original
MJ802A-Y190-400 Neu und Original
MJ802G(ON) Neu und Original
MJ802G,MJ802 Neu und Original
MJ803A-Y390-4G0 Neu und Original
MJ803A-Y399-X00 Neu und Original
MJ8050J Neu und Original
MJ806A-Y030-402 Neu und Original
MJ808F-Y180-412 Neu und Original
MJ808G-Y1C0-412 Neu und Original
MJ808H-Y180-412 Neu und Original
MJ80C31/883 Neu und Original
MJ80C31/B Neu und Original
Ohmite
Ohmite
MJ8062FE-R52 Metal Film Resistors - Through Hole 1/8W 80.6K Ohm 1% 200 Volt
STMicroelectronics
STMicroelectronics
MJ802 TRANS NPN 90V 30A TO-3
ON Semiconductor
ON Semiconductor
MJ802G Bipolar Transistors - BJT 30A 90V 200W NPN
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